SI7623DN Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
80
V_GS = 10 V thru 3 V
64
64
Si7623DN
Vishay Siliconix
48
48
32
16
0
0.0
0.020
V_GS = 2 V
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.016
32
T_C = 25 °C
16
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.8
1.6
2.4
3.2
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
8000
C_iss
6400
0.012
V_GS = 2.5 V
0.008
0.004
V_GS = 4.5 V
0.000
0
V_GS = 10 V
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
4800
3200
1600
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 10 A
8
V_DS = 10 V
6
V_DS = 5 V
4
V_DS = 15 V
2
0
0
25
50
75
100
125
Q_g - Total Gate Charge (nC)
Gate Charge
1.6
I_D = 20 A
1.4
V_GS = 10 V
1.2
V_GS = 2.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62668
For technical questions, contact: [e-mail]
www.vishay.com
S12-1764-Rev. A, 23-Jul-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000