SI7469DP-T1-E3 Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 80-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
100
40
80
Package Limited
30
60
20
40
10
20
0
0
0
25
50
75
100 125 150
25
T_C - Case Temperature (°C)
Current Derating*
100
Si7469DP
Vishay Siliconix
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
10
T_A =
L ^. I_D
BV - V_DD
1
0.000001
0.00001
0.0001
0.001
0.01
T_A - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73438
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
5