SI7469DP-T1-E3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 80-V (D-S) MOSFET

Si7469DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
30
25
20
15
10
5
0
0.0
V_GS = 10 V thru 4 V
3V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
20
16
12
8
T_A = 125 °C
4
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.026
0.025
0.024
V_GS = 4.5 V
0.023
0.022
0.021
V_GS = 10 V
0.020
0
5 10 15 20 25 30 35 40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10.2 A
8
6
V_DS = 40 V
4
V_DS = 64 V
2
0
0
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Gate Charge
8000
7000
6000
5000
C_iss
4000
3000
2000
C_oss
C_rss
1000
0
0 10 20 30 40 50 60 70 80
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.1
1.9 I_D = 10.2 A
1.7
1.5
V_GS = 10 V
1.3
V_GS = 4.5 V
1.1
0.9
0.7
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73438
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
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