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SI7141DP Datasheet, PDF (5/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
Si7141DP
Vishay Siliconix
160
120
80
Package Limited
40
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
125
3.0
100
2.4
75
1.8
50
1.2
25
0.6
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
www.vishay.com
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