SI7141DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
V_GS = 10 V thru 4 V
80
8
Si7141DP
Vishay Siliconix
60
V_GS = 3 V
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0030
0.0026
0.0022
V_GS = 4.5 V
6
4
T_C = 25 °C
2
T_C = 125 °C
0
T_C = - 55 °C
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
18 000
C_iss
14 400
10 800
0.0018
0.0014
V_GS = 10 V
0.0010
0
10
8
6
4
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current
I_D = 20 A
V_DS = 10 V
V_DS = 5 V
V_DS = 15 V
2
7200
3600
C_oss
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 25 A
1.3
V_GS = 10 V
1.1
V_GS = 4.5 V
0.9
0
0
60
120
180
240
300
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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