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SI6544DQ Datasheet, PDF (5/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET
Si6544DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
VGS = 10 to 5 V
16
16
4V
12
12
P-CHANNEL
Transfer Characteristics
8
4
0
0
0.20
3V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.16
8
4
0
0
1500
1200
TC = 125_C
25_C
–55_C
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Capacitance
Ciss
0.12
900
0.08
0.04
VGS = 4.5 V
VGS = 10 V
0
0
4
8
12
16
20
ID – Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 4.0 A
8
6
4
2
0
0
4
8
12
16
20
Qg – Total Gate Charge (nC)
600
Coss
300
Crss
0
0
6
12
18
24
30
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6
ID = 4.0 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 70668
S-56944—Rev. C, 23-Nov-98
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