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SI6544DQ Datasheet, PDF (2/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET | |||
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Si6544DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = â250 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 30 V, VGS = 0 V
VDS = â30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS = â30 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VDS w â5 V, VGS = â10 V
VGS = 10 V, ID = 4.0 A
VGS = â10 V, ID = â3.5 A
VGS = 4.5 V, ID = 3.4 A
VGS = â4.5 V, ID = â2.5 A
VDS = 15 V, ID = 4.0 A
VDS = â15 V, ID = â 3.5 A
IS = 1.25 A, VGS = 0 V
IS = â1.25 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 10 V, ID = 4.0 A
Qgs
P-Channel
VDS = â15 V, VGS = â10 V, ID = â3.5 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = â15 V, RL = 15 W
ID ^ â1 A, VGEN = â10 V, RG = 6 W
IF = 1.25 A, di/dt = 100 A/ms
IF = â1.25 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
1.0
P-Ch
â1.0
N-Ch
P-Ch
N-Ch
V
"100
nA
"100
1
P-Ch
N-Ch
â1
mA
5
P-Ch
N-Ch
20
P-Ch
â20
â5
A
N-Ch
0.027 0.035
P-Ch
N-Ch
0.035 0.045
W
0.038 0.050
P-Ch
N-Ch
P-Ch
0.062 0.090
13
S
7.2
N-Ch
P-Ch
0.73
1.2
V
â0.77 â1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
17.5
30
17
30
4.0
nC
4.4
2.5
3.1
12
20
13
20
9
20
10
20
25
50
ns
33
60
20
40
10
20
25
60
30
60
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70668
S-56944âRev. C, 23-Nov-98
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