SI5855DC Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

New Product
Si5855DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
MOSFET
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
2
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
100
10
10
1
10
SCHOTTKY
Forward Voltage Drop
1
0.1
0.01
0.001
20 V
10 V
T_J = 150_C
1
T_J = 25_C
0.0001
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
Document Number: 72232
S-31406—Rev. A, 07-Jul-03
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V_F - Forward Voltage Drop (V)
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