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| SI5855DC Datasheet, PDF (2/6 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode | |||
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Si5855DC
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Foot
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
t v 5 sec
Steady State
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJF
Typical
50
54
90
95
30
30
Maximum
60
65
110
115
40
40
Unit
_C/W
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 16 V, VGS = 0 V
VDS = - 16 V, VGS = 0 V, TJ = 85_C
VDS v - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 2.7 A
VGS = - 2.5 V, ID = - 2.2 A
VGS = - 1.8 V, ID = - 1 A
VDS = - 10 V, ID = - 2.7 A
IS = - 0.9 A, VGS = 0 V
- 0.45
- 10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 10 V, VGS = - 4.5 V, ID = - 2.7 A
VDD = - 10 V, RL = 10 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 0.9 A, di/dt = 100 A/ms
Typ
0.095
0.137
0.205
7
- 0.8
4.4
1.4
0.65
16
30
30
27
20
Max Unit
- 1.0
V
"100
nA
-1
mA
-5
A
0.110
0.160
W
0.240
S
- 1.2
V
6.5
nC
25
45
45
ns
40
40
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
IF = 1 A
IF = 1 A, TJ = 125_C
Vr = 20 V
Vr = 20 V, TJ = 85_C
Vr = 20 V, TJ = 125_C
Vr = 10 V
Typ
0.34
0.255
0.05
2
10
90
Max
0.375
0.290
0.500
20
100
Unit
V
mA
pF
www.vishay.com
2
Document Number: 72232
S-31406âRev. A, 07-Jul-03
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