SI5515CDC_10 Datasheet, PDF (5/16 Pages) Vishay Siliconix – N- and P-Channel 20 V (D-S) MOSFET

Si5515CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.06
0.05
10
0.04
I_D = 6 A
T_J = 125 °C
T_J = 150 °C
T_J = 25 °C
1
0.03
0.02
T_J = 25 °C
0.01
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
0.7
30
0.6
I_D = 250 µA
0.5
20
0.4
10
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
10^-4 10^-3
10^-2 10^-1 1
10
Time (s)
Single Pulse Power
100 1000
100 µs
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS
Limited
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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