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SI5515CDC_10 Datasheet, PDF (2/16 Pages) Vishay Siliconix – N- and P-Channel 20 V (D-S) MOSFET
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Si5515CDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 6.0 A
VGS = - 4.5 V, ID = - 3.1 A
VGS = 2.5 V, ID = 5.6 A
VGS = - 2.5 V, ID = - 2.8 A
VGS = 1.8 V, ID = 5.1 A
VGS = - 1.8 V, ID = - 2.5 A
VDS = 10 V, ID = 6.0 A
VDS = - 10 V, ID = - 3.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10 V, VGS = 5 V, ID = 6.0 A
Qg
VDS = - 10 V, VGS = - 5 V, ID = - 3.1 A
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 6.0 A
Qgs
P-Channel
Qgd
VDS = - 10 V, VGS = - 4.5 V, ID = - 3.1 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
- 20
0.4
- 0.4
20
- 10
0.66
1.22
Typ.a Max. Unit
V
18
- 19
- 2.7
2.5
mV/°C
0.8
V
- 0.8
100
nA
- 100
1
-1
µA
10
- 10
A
0.030 0.036
0.083 0.100
0.034 0.041
Ω
0.100 0.120
0.040 0.050
0.130 0.156
22.4
S
9.5
632
455
80
pF
70
40
54
7.5 11.3
7
11
6.5 9.8
6.2
9.3
nC
1.1
0.85
0.9
1.75
3.3 6.6
Ω
6.1 12.2
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Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
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