SI4952DY Datasheet, PDF (5/9 Pages) Vishay Siliconix – Dual N-Channel 25-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
3.0
2.5
8
Package Limited
2.0
6
1.5
4
1.0
2
0.5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0.0
25
Si4952DY
Vishay Siliconix
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70448
S09-0764-Rev. C, 04-May-09
www.vishay.com
5