SI4952DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 25-V (D-S) MOSFET

Dual N-Channel 25-V (D-S) MOSFET
Si4952DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.023 at V_GS = 10 V
25
0.028 at V_GS = 4.5 V
I_D (A)^a
8
8
Q_g (Typ.)
5.5 nC
SO-8
S₁ 1
G₁ 2
S₂ 3
G_{2 4}
8 D1
7 ^D1
6 D2
5 ^D2
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
• Gaming
• Notebook System Power
D₁
D₂
G₁
G₂
Ordering Information: Si4952DY-T1-E3 (Lead (Pb)-free)
Si4952DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
25
± 16
8^a
7
7^{b, c}
5.6^{b, c}
30
2.3
1.5^{b, c}
5
1.25
2.8
1.8
1.8^{b, c}
1.1^{b, c}
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
57
36
Maximum
70
44
Unit
°C/W
Document Number: 70448
S09-0764-Rev. C, 04-May-09
www.vishay.com
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