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SI4828DY Datasheet, PDF (5/7 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET
New Product
Si4828DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
CHANNELĆ1
0.01
10–4
Single Pulse
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
50
VGS = 10 thru 4 V
32
40
1
10
CHANNELĆ2
Transfer Characteristics
24
30
TC = 125_C
16
20
8
0
0
0.020
0.016
0.012
2V
3V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0.008
0.004
0
0
8
16
24
32
40
ID – Drain Current (A)
Document Number: 71181
S-00983—Rev. A, 15-May-00
10
25_C
–55_C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
4200
Capacitance
3500
Ciss
2800
2100
1400
Coss
700
Crss
0
0
6
12
18
24
30
VDS – Drain-to-Source Voltage (V)
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