SI4828DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

New Product
Si4828DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
Channel-2
V_DS (V)
30
r_DS(on) (W)
0.022 @ V_GS = 10 V
0.030 @ V_GS = 4.5 V
0.0135 @ V_GS = 10 V
0.0175 @ V_GS = 4.5 V
I_D (A)
7.5
6.5
9.8
8.5
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁ D₁
D₂ D₂
G₁
S₁
N-Channel 1
MOSFET
G₂
S₂
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
7.5
5.8
9.8
7.5
6
4.6
7.8
6
30
40
1.8
1.06
1.8
1.06
2
1.17
2
1.17
1.78
0.75
1.28
0.75
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
t v 10 sec
Steady-State
R_thJA
Maximum Junction-to-Foot (Drain)
Steady-State
R_thJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71181
S-00983—Rev. A, 15-May-00
Channel-1
Typ
Max
55
62.5
89
107
36
45
Channel-2
Typ
Max
53
62.5
89
107
34
42
Unit
_C/W
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