SI4562DY-T1-E3 Datasheet, PDF (5/10 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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Si4835DDY
Vishay Siliconix
12
9
6
3
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
7.0
2.0
5.6
1.6
4.2
1.2
2.8
0.8
1.4
0.4
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
www.vishay.com
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