SI4562DY-T1-E3 Datasheet, PDF (4/10 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si4835DDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
T_J = 150 °C
10
0.10
I_D = 10 A
0.08
T_J = 25 °C
1
0.06
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.04
T_J = 125 °C
0.02
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.6
0.4
0.2
0.0
- 0.2
I_D = 5 mA
40
30
I_D = 250 µA
20
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
0.01
0.01
T_A = 25 °C
Single Pulse
0.1
1
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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4
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09