SI3529DV Datasheet, PDF (5/12 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.35
0.28
T_J = 150 °C
0.21
1
0.14
T_J = 25 °C
0.07
Si3529DV
Vishay Siliconix
I_D = 2.0 A
0.01
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0.0 _{ID = 250 µA}
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
8
6
4
2
0
0.01
0.1
1
10 30
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
Limited by R_DS(on)*
10
10 µs
100 µs
1
1 ms
0.1
0.01
0.1
T_A = 25 °C
Single Pulse
1
DC
10
10 ms
100 ms
1s
10 s
100 s
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
5