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SI3529DV Datasheet, PDF (1/12 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET
Si3529DV
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel 40
0.125 at VGS = 10 V
0.165 at VGS = 4.5 V
P-Channel - 40 0.215 at VGS = - 10 V
0.335 at VGS = - 4.5 V
ID (A)a Qg (Typ.)
2.250
2.2
1.95
- 1.76
2.3
- 1.4
TSOP-6
Top V iew
G1
1
6
D1
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Stepper Motor
• Motor Drives
D1
S2
3 mm S2
2
5
S1
G2
3
4
D2
G2
G1
2.85 mm
Ordering Information: Si3529DV-T1-E3 (Lead (Pb)-free)
Si3529DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
- 40
V
VGS
± 20
TC = 25 °C
2.5
- 1.95
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
2.0
2.25b, c
- 1.56
- 1.76b, c
TA = 70 °C
1.8b, c
- 1.4b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM
10
-6
A
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
1.26
1.05b, c
- 1.26
- 1.05b, c
Pulsed Source-Drain Current
ISM
10
-6
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
5
1.25
5
1.25
mJ
TC = 25 °C
1.4
1.4
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
0.9
1.15b, c
0.9
1.15c
W
TA = 70 °C
0.7b, c
0.78b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ.
Maximum Junction-to-Ambientb, d
t ≤ 10 sec
RthJA
93
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
75
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 150 °C/W (N-Channel) and 150 °C/W (P-Channel).
Max.
110
90
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
P-Channel
Typ. Max.
93
110
75
90
Unit
°C/W
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