 English |
|
|
|
|
|
|
|
| IRFD9210 Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A) | |||
| |||
| ◁ |
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFD9210, SiHFD9210
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
- 10 V
Pulse width ⤠1 µs
Duty factor ⤠0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VGS
10 %
td(on) tr
td(off) tf
90 %
VDS
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
- 10 V
tp
L
D.U.T.
IAS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91140
S-Pending-Rev. A, 23-Jun-08
IAS
VDS
VDD
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese