IRFD9210 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)

Power MOSFET
IRFD9210, SiHFD9210
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 200
V_GS = - 10 V
3.0
8.9
2.1
3.9
Single
S
HEXDIP
G
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
The Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design archieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
HEXDIP
IRFD9210PbF
SiHFD9210-E3
IRFD9210
SiHFD9210
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 50 V, starting T_J = 25 °C, L = 123 mH, R_G = 25 Ω, I_AS = - 1.6 A (see fig. 12).
c. I_SD ≤ - 2.3 A, dI/dt ≤ 70 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91140
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
LIMIT
- 200
± 20
- 0.40
- 0.25
- 3.2
0.0083
210
- 0.40
0.10
1.0
- 5.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
www.vishay.com
1