IRFBC20S Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- _VDD
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V_DS
Vary t_p to obtain
required I_AS
R_G
10 V
t_p
L
D.U.T.
I_AS
0.01 Ω
+
- ^{V DD}
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91107
S-Pending-Rev. A, 03-Jun-08
V_DS
V_DS
t_p
V_DD
I_AS
Fig. 12b - Unclamped Inductive Waveforms
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