IRFBC20S Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
600
V_GS = 10 V
18
3.0
8.9
Single
I²PAK (TO-262) D²PAK (TO-263)
4.4
D
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface Mount (IRFBC20S/SiHFBC20S)
• Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)
• Available in Tape and Reel (IRFBC20S/SiHFBC20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
Available
RoHS*
COMPLIANT
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBC20L/SiHFBC20L) is a available
for low-profile applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRFBC20SPbF
SiHFBC20S-E3
SnPb
IRFBC20S
SiHFBC20S
Note
a. See device orientation.
D²PAK (TO-263)
IRFBC20STRLPbF^a
SiHFBC20STL-E3^a
IRFBC20STRL^a
SiHFBC20STL^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^e
Pulsed Drain Current^{a, e}
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
Avalanche Current^a
Repetiitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_A = 25 °C
T_C = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 31 mH, R_G = 25 Ω, I_AS = 2.2 A (see fig. 12).
c. I_SD ≤ 2.2 A, dI/dt ≤ 40 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC20/SiHFBC20 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
I²PAK (TO-262)
IRFBC20LPbF
SiHFBC20L-E3
IRFBC20L
SiHFBC20L
LIMIT
600
± 20
2.2
1.4
8.0
0.40
84
2.2
5.0
3.1
50
3.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91107
S-Pending-Rev. A, 03-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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