IRF9620 Datasheet, PDF (5/7 Pages) Intersil Corporation – 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

Fig. 12 - Typical On-Resistance vs. Drain Current
IRF9620, SiHF9620
Vishay Siliconix
L
Vary t_p to obtain
required I_L
VGS = - 10 V tp
D.U.T.
V_DS
V_DD
-
+
EC
I_L
VDD = 0.5 VDS
0.05 Ω
EC = 0.75 VDS
Fig. 15 - Clamped Inductive Test Circuit
V_DD
I_L
t_p
V_DS
E_C
Fig. 16 - Clamped Inductive Waveforms
Fig. 13 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+_VDD
Fig. 17a - Switching Time Test Circuit
Fig. 14 - Power vs. Temperature Derating Curve
Document Number: 91082
S-81272-Rev. A, 16-Jun-08
V_GS
10 %
t_d(on) t_r
90 %
V_DS
t_d(off) t_f
Fig. 17b - Switching Time Waveforms
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