IRF9620 Datasheet, PDF (1/7 Pages) Intersil Corporation – 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

Power MOSFET
IRF9620, SiHF9620
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 200
V_GS = - 10 V
1.5
22
12
10
Single
TO-220
S
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRF9620PbF
SiHF9620-E3
IRF9620
SiHF9620
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
V_GS at - 10 V
I_D
T_C = 100 °C
Pulsed Drain Current^a
I_DM
Linear Derating Factor
Maximum Power Dissipation
Peak Diode Recovery dV/dt^b
T_C = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. I_SD ≤ - 3.5 A, dI/dt ≤ 95 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
c. 1.6 mm from case.
LIMIT
- 200
± 20
- 3.5
- 2.0
- 14
0.32
40
- 5.0
- 55 to + 150
300^c
10
1.1
UNIT
V
A
W/°C
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91082
S-81272-Rev. A, 16-Jun-08
www.vishay.com
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