IRF9530STRLPBF Datasheet, PDF (5/9 Pages) Vishay Siliconix – Power MOSFET

12
10
8
6
4
2
0
25
50
75 100 125 150 175
91077_09
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF9530S, SiHF9530S
Vishay Siliconix
V_DS
V_GS
R_g
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+V_DD
Fig. 10a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 10b - Switching Time Waveforms
10
1 _{D = 0.5}
0.2
0.1
0.1 ^0.05
0.02
0.01
10^-2
10^-5
91077_11
P_DM
Single Pulse
(Thermal Response)
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Peak T_j = P_DM x Z_thJC + T_C
10^-4
10^-3
10^-2
0.1
1
10
t₁, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91077
S11-1051-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000