IRF9530STRLPBF Datasheet, PDF (4/9 Pages) Vishay Siliconix – Power MOSFET

IRF9530S, SiHF9530S
Vishay Siliconix
1800
1500
1200
900
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
600
C_oss
300
C_rss
0
10⁰
10¹
91077_05
- V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10¹
175 °C
25 °C
10⁰
V_GS = 0 V
10^-1
1.0
2.0
3.0
4.0
5.0
91076_07
- V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 _{ID = - 12 A}
16
V_DS = - 80 V
V_DS = - 50 V
12
V_DS = - 20 V
8
4
0
0
91077_06
For test circuit
see figure 13
10
20
30
40
50
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10³
5
Operation in this area limited
by R_DS(on)
2
10²
5
10 µs
2
100 µs
10
1 ms
5
2
1
5
2
0.1
0.1 ²
10 ms
T_C = 25 °C
T_J = 175 °C
Single Pulse
5 ₁ 2 5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
91077_08
- V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91077
S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000