IRF830STRRPBF Datasheet, PDF (5/9 Pages) Vishay Siliconix – Power MOSFET

5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
91064_09
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF830S, SiHF830S
Vishay Siliconix
V_DS
V_GS
R_g
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- _VDD
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
10
1 D = 0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
10^-2
10^-5
91064_11
Single Pulse
(Thermal Response)
10^-4
10^-3
10^-2
0.1
t₁, Rectangular Pulse Duration (s)
P_DM
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Peak T_j = P_DM x Z_thJC + T_C
1
10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91064
S11-1049-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000