IRF830STRRPBF Datasheet, PDF (3/9 Pages) Vishay Siliconix – Power MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF830S, SiHF830S
Vishay Siliconix
10¹ _Top
V_GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10⁰ Bottom 4.5 V
4.5 V
10^-1
91064_01
20 µs Pulse Width
T_C = 25 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
10¹
150 °C
25 °C
10⁰
10^-1
4
91064_03
20 µs Pulse Width
V_DS = 50 V
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10¹ _Top
V_GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10⁰ Bottom 4.5 V
4.5 V
10^-1
91064_02
20 µs Pulse Width
T_C = 150 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
3.0
I_D = 3.1 A
V_GS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91064_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91064
S11-1049-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000