2N5484 Datasheet, PDF (5/7 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers

2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
10
V_GS(off) = –2 V
V_DS = 10 V
8
T_A = –55_C
6
25_C
4 ^125_C
Transfer Characteristics
10
V_GS(off) = –3 V
V_DS = 10 V
8
T_A = –55_C
25_C
6
125_C
4
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
V_GS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
V_GS(off) = –2 V
V_DS = 10 V
f = 1 kHz
8
T_A = –55_C
6
25_C
4
125_C
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
V_GS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300
T_A = 25_C
240
V_GS(off) = –2 V
180
–3 V
120
60
0
0.1
1
10
I_D – Drain Current (mA)
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
2
0
0
–0.6
–1.2
–1.8
–2.4
–3
V_GS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
V_GS(off) = –3 V
V_DS = 10 V
f = 1 kHz
8
T_A = –55_C
6
25_C
4
125_C
2
0
0
–0.6
–1.2
–1.8
–2.4
–3
V_GS – Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100
g_fs R_L
A_V + _{1 ) RLgos}
80
Assume V_DD = 15 V, V_DS = 5 V
10 V
R_L + _ID
60
40
20
0
0.1
V_GS(off) = –2 V
–3 V
1
10
I_D – Drain Current (mA)
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