2N5484 Datasheet, PDF (4/7 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers

2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
10
16
I_DSS
8
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
100
r_DS @ I_D = 1 mA, V_GS = 0 V
g_os @ V_DS = 10 V, V_GS = 0 V
400
f = 1 kHz
80
12
g_fs
8
6
300
r_DS
60
g_os
4
200
40
4
I_DSS @ V_DS = 10 V, V_GS = 0 V
2
g_fs @ V_DS = 10 V, V_GS = 0 V
f = 1 kHz
0
0
0
–2
–4
–6
–8
–10
V_GS(off) – Gate-Source Cutoff Voltage (V)
100 nA
10 nA
1 nA
Gate Leakage Current
I_D = 5 mA
1 mA
T_A = 125_C
0.1 mA
100 pA
10 pA
1 pA
I_D = 5 mA
T_A = 25_C
I_GSS @
125_C
1 mA
0.1 mA
I_GSS @ 25_C
0.1 pA
0
10
8
4
8
12
16
20
V_DG – Drain-Gate Voltage (V)
Output Characteristics
V_GS(off) = –2 V
V_GS = 0 V
6
–0.2 V
–0.4 V
4
–0.6 V
–0.8 V
–1.0 V
2
–1.2 V
0
0
–1.4 V
2
4
6
8
10
V_DS – Drain-Source Voltage (V)
www.vishay.com
7-4
100
20
0
0
0
–2
–4
–6
–8
–10
V_GS(off) – Gate-Source Cutoff Voltage (V)
Common-Source Forward
Transconductance vs. Drain Current
10
V_GS(off) = –3 V
V_DS = 10 V
f = 1 kHz
8
6
T_A = –55_C
25_C
4
125_C
2
0
0.1
15
12
9
6
3
0
0
1
10
I_D – Drain Current (mA)
Output Characteristics
V_GS(off) = –3 V
V_GS = 0 V
–0.3 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
2
4
6
8
10
V_DS – Drain-Source Voltage (V)
Document Number: 70246
S-04028—Rev. E, 04-Jun-01