VS-UFB230FA60 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Two fully independent diodes

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175
150
125
100
DC
75
50
Square wave (D = 0.50)
25 _{80 % Rated VR applied}
0
0 40 80 120 160 200 240 280
93641_05
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
500
400
RMS Limit
300
D = 0.20
200
D = 0.25
D = 0.33
D = 0.50
100
D = 0.75
DC
0
0 40 80 120 160 200 240 280
93641_06
Average Forward Current - I_F(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
VS-UFB230FA60
Vishay Semiconductors
250
V_R = 200 V
200
I_F = 50 A, 125 °C
150
100
I_F = 50 A, 25 °C
50
100
1000
93641_07
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
3500
3000
V_R = 200 V
2500
2000
1500
I_F = 50 A, T_J = 125 °C
1000
500
I_F = 50 A, T_J = 25 °C
0
100
1000
93641_08
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
40
V_R = 200 V
30
I_F = 50 A, 125 °C
20
I_F = 50 A, 25 °C
10
0
100
93641_09
dI_F/dt (A/μs)
Fig. 9 - Typical I_rr Diode vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6); 
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
1000
Revision: 31-May-16
4
Document Number: 93641
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