VS-UFB230FA60 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Two fully independent diodes

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VS-UFB230FA60
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
V_BR
I_R = 100 μA
I_F = 100 A
Forward voltage
I_F = 100 A, T_J = 125 °C
V_FM
I_F = 200 A
I_F = 200 A, T_J = 125 °C
Reverse leakage current
V_R = V_R rated
I_RM
T_J = 175 °C, V_R = V_R rated
Junction capacitance
C_T
V_R = 600 V
600
-
-
1.46
-
1.23
-
1.70
-
1.50
-
0.1
-
0.30
-
77
MAX.
-
1.78
1.52
2.05
1.78
50
2
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V -
43
t_rr
T_J = 25 °C
-
83
Peak recovery current
Reverse recovery charge
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
I_F = 50 A
-
dI_F/dt = 200 A/μs
V_R = 200 V
-
-
-
182
7
18
290
1595
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
R_thCS
Flat, greased surface
Weight
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-
-
-
-
-
-
TYP.
MAX.
-
0.43
-
0.215
0.05
-
30
-
-
1.1 (9.7)
-
1.3 (11.5)
SOT-227
UNITS
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
Revision: 31-May-16
2
Document Number: 93641
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