VS-SD803CC Datasheet, PDF (4/8 Pages) Vishay Siliconix – High voltage ratings up to 1600 V

www.vishay.com
10000
9000
8000
At Any Rated Load Condition And With
Rated V_RRM Applied Following Surge.
Initial T_J = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
7000
6000
5000
SD803C..C Series
4000
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double-Side Cooled
12000
Maximum Non Repetitive Surge Current
11000
10000
VersusPulse Train Duration.
Initial T_J= 125°C
No Voltage Reapplied
9000
Rated V_RRMReapplied
8000
7000
6000
5000
4000 SD803C..C Series
3000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double-Side Cooled
10000
1000
T_J= 25°C
100
T_J= 125°C
SD803C..C Series
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Instantaneous Forward Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
VS-SD803C..C Series
Vishay Semiconductors
0.1
SD803C..C Series
0.01
Steady State Value
R _thJ-hs = 0.076 K/ W
(Single Side Cooled)
R _thJ-hs = 0.038 K/ W
(Double Side Cooled)
(DC Operation)
0.001
0.001 0.01 0.1
1
10 100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z_thJ-hs Characteristics
2.2
SD803C..S10C Series
T_J= 125 °C; Vr = 30V
2.1
I _FM = 1000 A
Square Pulse
2
1.9
500 A
1.8
1.7
250 A
1.6
10
100
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 11 - Recovery Time Characteristics
130
120
I _FM = 1000 A
Square Pulse
110
100
500 A
90
80
250 A
70
60
50
40
SD803C..S10C Series
30
T_J= 125 °C; Vr = 30V
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Charge Characteristics
Revision: 14-Jan-14
4
Document Number: 93180
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000