VS-SD803CC Datasheet, PDF (2/8 Pages) Vishay Siliconix – High voltage ratings up to 1600 V

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VS-SD803C..C Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current 
at heatsink temperature
Maximum RMS forward current
SYMBOL
I_F(AV)
I_F(RMS)
Maximum peak, one-cycle forward, 
non-repetitive current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
Low level of threshold voltage
High level of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
I²ïƒ–t
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I_F(AV) < I <  x I_F(AV)), T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
(16.7 % x  x I_F(AV) < I <  x I_F(AV)), T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
I_pk = 2655 A, T_J = T_J maximum t_p = 10 ms sinusoidal wave
VALUES
845 (420)
55 (75)
1326
11 295
11 830
9500
9945
640
583
451
412
6400
1.02
1.32
0.38
0.28
1.89
UNITS
A
°C
A
kA²s
kA²ïƒ–s
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T_J = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT T_J = 125 °C
CODE
t_rr AT 25 % I_RRM
I_pk
SQUARE
dI/dt
V_r
t_rr AT 25 % I_RRM
Q_rr
I_rr
(μs)
PULSE (A/μs) (V)
(μs)
(μC)
(A)
(A)
S10
1.0
2.0
45
34
1000
50
-30
S15
1.5
3.2
87
51
I_FM
t_rr
dir
t
dt
Q_rr
I_RM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
case junction to heatsink
T_J
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
-40 to 125
-40 to 125
0.076
0.038
9800 (1000)
83
B-43
UNITS
°C
K/W
N (kg)
g
R_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
120°
90°
60°
30°
0.006
0.008
0.010
0.015
0.026
0.007
0.008
0.010
0.015
0.026
0.005
0.008
0.011
0.016
0.026
0.005
0.008
0.011
0.016
0.026
T_J = T_J maximum
K/W
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
Revision: 14-Jan-14
2
Document Number: 93180
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