VS-HFA30TA60CHN3 Datasheet, PDF (4/6 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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100
I_F = 30 A
I_F = 15 A
80
I_F = 5.0 A
60
40
20 V_R = 200 V
T_J = 125 °C
T_J = 25 °C
0
100
1000
dI_F/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt (Per Leg)
25
V_R = 200 V
T_J = 125 °C
20 ^{TJ = 25 °C}
I_F = 30 A
15
I_F = 15 A
I_F = 5 A
10
5
0
100
1000
dI_F/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI_F/dt (Per Leg)
VS-HFA30TA60CHN3
Vishay Semiconductors
800
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
600
I_F = 30 A
I_F = 15 A
400
I_F = 5 A
200
0
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt (Per Leg)
10 000
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
I_F = 30 A
I_F = 15 A
I_F = 5 A
100
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt (Per Leg)
V_R = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dI_F/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 15-Jul-15
4
Document Number: 94511
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