VS-HFA30TA60CHN3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA30TA60CHN3
Vishay Semiconductors
HEXFRED^®
Ultrafast Soft Recovery Diode, 2 x 15 A
TO-220AB
Base
common
cathode
2
2
Common
Anode ^cathode Anode
1
3
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
TO-220AB
2 x 15 A
600 V
1.2 V
19 ns
150 °C
Common cathode
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I_RRM and Q_rr
• AEC-Q101 qualified, meets JESD 201 class 1A
whisker test
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30TA60CHN3 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60CHN3 is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED^® product line features extremely low values of
peak recovery current (I_RRM) and does not exhibit any
tendency to “snap-off” during the t_b portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60CHN3 is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
per leg
per device
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V_R
I_F
I_FSM
I_FRM
Maximum power dissipation
P_D
Operating junction and storage temperature range
T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
600
15
30
150
60
74
29
-55 to +150
UNITS
V
A
W
°C
Revision: 15-Jul-15
1
Document Number: 94511
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000