VS-HFA25TB60PBF Datasheet, PDF (4/7 Pages) InterFET Corporation – Ultrafast, Soft Recovery Diode

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VS-HFA25TB60PbF, VS-HFA25TB60-N3
Vishay Semiconductors
140
V_R = 200 V
T_J = 125 °C
120
T_J = 25 °C
100
80 I_F = 50 A
I_F = 25 A
60 ^{IF = 10 A}
40
20
100
1000
dI_F/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt
30
V_R = 200 V
25
T_J = 125 °C
T_J = 25 °C
20
I_F = 20 A
I_F = 25 A
I_F = 10 A
15
10
5
0
100
1000
dI_F/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI_F/dt
1400
1200
1000
800
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
I_F = 50 A
I_F = 25 A
I_F = 10 A
600
400
200
0
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt
10 000
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
I_F = 50 A
I_F = 25 A
I_F = 10 A
100
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt
V_R = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dI_F/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 14-Jul-15
4
Document Number: 94065
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