VS-HFA25TB60PBF Datasheet, PDF (2/7 Pages) InterFET Corporation – Ultrafast, Soft Recovery Diode

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VS-HFA25TB60PbF, VS-HFA25TB60-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
I_F = 25 A
Maximum forward voltage
V_FM
I_F = 50 A
See fig. 1
I_F = 25 A, T_J = 125 °C
Maximum reverse
leakage current
V_R = V_R rated
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
Junction capacitance
C_T
V_R = 200 V
See fig. 3
Series inductance
L_S
Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.3
1.5
1.3
1.5
600
55
8.0
MAX.
-
1.7
2.0
1.7
20
2000
100
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5, 6 and 16
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
t_rr1
T_J = 25 °C
t_rr2
T_J = 125 °C
-
23
-
50
-
105
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
I_RRM1
I_RRM2
Q_rr1
Q_rr2
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 25 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
4.5
-
8.0
-
112
-
420
Peak rate of fall of recovery
current during t_b
See fig. 11 and 12
dI_(rec)M/dt1 T_J = 25 °C
dI_(rec)M/dt2 T_J = 125 °C
-
250
-
160
MAX.
-
75
160
10
15
375
1200
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
T_lead
R_thJC
0.063” from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.0
UNITS
°C
-
80
K/W
0.5
-
2.0
-
0.07
-
12
-
(10)
HFA25TB60
g
oz.
kgf · cm
(lbf · in)
Revision: 14-Jul-15
2
Document Number: 94065
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