VS-HFA12PA120CPBF Datasheet, PDF (4/7 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

www.vishay.com
VS-HFA12PA120CPbF, VS-HFA12PA120C-N3
Vishay Semiconductors
110
100
I_F = 6 A
I_F = 4 A
90
80
70
60
50
40
30
20
100
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt - (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt
25
V_R = 200 V
20
T_J = 125 °C
T_J = 25 °C
15
I_F = 6 A
I_F = 4 A
10
5
0
100
1000
dI_F/dt - (A/µs)
Fig. 6 - Typical Recovery Current vs. dI_F/dt
1000
800
600
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
I_F = 6 A
I_F = 4 A
400
200
0
100
1000
dI_F/dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt
10 000
1000
I_F = 6 A
I_F = 4 A
100
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
10
100
1000
dI_F/dt - (A/µs)
Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt
V_R = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dI_F/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 15-Jul-15
4
Document Number: 94597
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000