VS-HFA12PA120CPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA12PA120CPbF, VS-HFA12PA120C-N3
Vishay Semiconductors
HEXFRED^®
Ultrafast Soft Recovery Diode, 2 x 6 A
TO-247AC
Base
common
cathode
2
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I_RRM and Q_rr
• Designed and qualified according to
JEDEC^®-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
Available
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
1
3
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
TO-247AC
2x6A
1200 V
2.4 V
26 ns
150 °C
Single die
DESCRIPTION
VS-HFA12PA120C... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. The VS-HFA12PA120C... has basic
ratings of 1200 V and 6 A per leg continuous current. In
addition to ultrafast recovery time, the HEXFRED^® product
line features extremely low values of peak recovery current
(I_RRM) and does not exhibit any tendency to “snap-off”
during the t_b portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA12PA120C... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters, converters, UPS
systems, and power factor correction circuits), motor drives,
and many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
per leg
Maximum continuous forward current
per device
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V_R
I_F
I_FSM
I_FRM
Maximum power dissipation
P_D
Operating junction and storage temperature range T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
1200
6
12
80
24
62.5
25
-55 to +150
UNITS
V
A
W
°C
Revision: 15-Jul-15
1
Document Number: 94597
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000