VS-HFA08PB60PBF Datasheet, PDF (4/7 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA08PB60PbF, VS-HFA08PB60-N3
Vishay Semiconductors
80
I_F = 16 A
I_F = 8 A
60
I_F = 4 A
40
20
V_R = 200 V
T_J = 125 °C
0 ^{TJ = 25 °C}
100
1000
dI_F/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt
(Per Leg)
20
V_R = 200 V
T_J = 125 °C
16 ^TJ ^{= 25 °C}
I_F = 16 A
12
I_F = 8 A
I_F = 4 A
8
4
0
100
1000
dI_F/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI_F/dt
(Per Leg)
500
V_R = 200 V
T_J = 125 °C
400 ^{TJ = 25 °C}
I_F = 16 A
300
I_F = 8 A
I_F = 4 A
200
100
0
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt
(Per Leg)
10 000
I_F = 16 A
I_F = 8 A
I_F = 4 A
1000
10
100
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt
(Per Leg)
V_R = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dI_F/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 20-Apr-16
4
Document Number: 94041
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