VS-HFA06PB120PBF Datasheet, PDF (4/7 Pages) Vishay Siliconix – Higher frequency operation

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VS-HFA06PB120PbF, VS-HFA06PB120-N3
Vishay Semiconductors
110
100
I_F = 6 A
90
I_F = 4 A
80
70
60
50
40
30
V_R = 200 V
T_J = 125 °C
20 ^{TJ = 25 °C}
100
1000
dI_F/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt
25
V_R = 200 V
T_J = 125 °C
20 ^TJ ^{= 25 °C}
15
I_F = 6 A
I_F = 4 A
10
5
0
100
1000
dI_F/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI_F/dt
1000
800
600
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
I_F = 6 A
I_F = 4 A
400
200
0
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt
10 000
1000
I_F = 6 A
I_F = 4 A
100
10
100
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt
V_R = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dI_F/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 10-Jul-15
4
Document Number: 94037
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