VS-HFA06PB120PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Higher frequency operation

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VS-HFA06PB120PbF, VS-HFA06PB120-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
I_F = 6.0 A
Maximum forward voltage
V_FM
I_F = 12 A
I_F = 6.0 A, T_J = 125 °C
Maximum reverse
leakage current
V_R = V_R rated
I_RM
T_J = 125 °C, V_R = 0.8 x V_R rated
Junction capacitance
C_T
V_R = 200 V
Series inductance
L_S
Measured lead to lead 5 mm from package body
MIN.
1200
-
-
-
-
-
-
-
TYP.
-
2.7
3.5
2.4
0.26
110
9.0
8.0
MAX.
-
3.0
3.9
2.8
5.0
500
14
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_C = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
26
Reverse recovery time
t_rr1
T_J = 25 °C
t_rr2
T_J = 125 °C
-
53
-
87
Peak recovery current
Reverse recovery charge
I_RRM1
I_RRM2
Q_rr1
Q_rr2
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 6.0 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
4.4
-
5.0
-
116
-
233
Peak rate of recovery current
during t_b
dI_(rec)M/dt1
dI_(rec)M/dt2
T_J = 25 °C
T_J = 125 °C
-
180
-
100
MAX.
-
80
130
8.0
9.0
320
585
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
T_lead
R_thJC
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
2.0
UNITS
°C
-
80
K/W
0.5
-
2.0
-
0.07
-
12
-
(10)
HFA06PB120
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-15
2
Document Number: 94037
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