VS-GT400TH120N Datasheet, PDF (4/6 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A

www.vishay.com
VS-GT400TH120N
Vishay Semiconductors
1000
800
I_C, module
600
400
200 R_g = 1.8 Ω
V_GE = ± 15 V
T_J = 125 °C
0
0
300
600
900
V_CE (V)
Fig. 5 - RBSOA
1200
1500
0.1
IGBT
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
800
700
600
25 °C
500
400
300
200
125 °C
100
0
0
0.5
1.0
1.5
2.0
2.5
V_F (V)
Fig. 7 - Typical Forward Characteristics
60
50
40
30
E_rec
20
10
0
0
V_CC = 600 V
R_g = 1.8 Ω
V_GE = - 15 V
T_J = 125 °C
200
400
600
800
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
Revision: 12-Jun-15
4
Document Number: 94748
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000