VS-GT400TH120N Datasheet, PDF (3/6 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
T_J
Storage temperature range
T_STG
Junction to case
IGBT
Diode
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
VS-GT400TH120N
Vishay Semiconductors
MIN. TYP. MAX. UNITS
-
-
150
°C
-40
-
125
-
- 0.059
-
- 0.106 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 5.0
300
g
800
700
600
25 °C
500
125 °C
400
300
200
100
0
0
V_GE = 15 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
800
700
V_CE = 20 V
600
500
25 °C
400
300
125 °C
200
100
0
4 5 6 7 8 9 10 11 12
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
150
V_CC = 600 V
125
R_g = 1.8 Ω
V_GE = ± 15 V
T_J = 125 °C
100
75
E_off
50
25
E_on
0
0
200
400
600
800
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
200
V_CC = 600 V
I_C = 400 A
160 ^VGE ^{= ± 15 V}
T_J = 125 °C
120
E_on
80
E_off
40
0
0
3
6
9
12 15 18
R_g (Ω)
Fig. 4 - Switching Loss vs. P_g
Revision: 12-Jun-15
3
Document Number: 94748
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