VS-GB75TP120N Datasheet, PDF (4/7 Pages) Vishay Siliconix – High short circuit capability, self limiting to 6 x I

www.vishay.com
10⁰
10^-1
VS-GB75TP120N
Vishay Semiconductors
IGBT
10^-2
10^-3
10^-3
10^-2
10^-1
10⁰
10¹
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
150
125
100
75
50
125 °C
25
25 °C
0
0 0.4 0.8 1.2 1.6
2
2.4
V_F (V)
Fig. 7 - Typical Diode Forward Characteristics
6
5
E_rec
4
3
2
V_CC = 600 V
R_g = 10 Ω
1
V_GE = - 15 V
T_J = 125 °C
0
0
25
50
75 100 125 150
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
5
4.5
4
3.5
3
E_rec
2.5
2
1.5
V_CC = 600 V
1
I_C = 75 A
V_GE = - 15 V
0.5
T_J = 125 °C
0
0
20
40
60
R_g (Ω)
80
100
Fig. 9 - Diode Switching Loss vs. R_g
Revision: 10-Jun-15
4
Document Number: 94712
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000