VS-GB75TP120N Datasheet, PDF (3/7 Pages) Vishay Siliconix – High short circuit capability, self limiting to 6 x I

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150
V_GE = 15 V
125
100
25 °C
75
125 °C
50
25
0
0 0.5
1 1.5
2 2.5
3 3.5
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
150
125
V_CE = 20 V
100
75
125 °C
50
25
25 °C
0
6
7
8
9
10 11 12 13
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
VS-GB75TP120N
Vishay Semiconductors
30
V_CC = 600 V
25 ^{Rg = 10 Ω}
V_GE = ± 15 V
T_J = 125 °C
20
15
E_on
10
E_off
5
0
0
25
50
75 100 125 150
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
40
V_CC = 600 V
35 I_C = 75 A
V_GE = ± 15 V
30 _{TJ = 125 °C}
25
E_on
20
15
10
E_off
5
0
0
20
40
60
80
100
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
175
150
125
I_C, Module
100
75
50
25
0
0
R_g = 10 Ω
V_GE = ± 15 V
T_J = 125 °C
250 500 750 1000
V_CE (V)
Fig. 5 - RBSOA
1250 1500
Revision: 10-Jun-15
3
Document Number: 94712
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