VS-GB50TP120N Datasheet, PDF (4/6 Pages) Vishay Siliconix – 10 μs short circuit capability

www.vishay.com
10⁰
10^-1
VS-GB50TP120N
Vishay Semiconductors
IGBT
10^-2
10^-3
10^-2
10^-1
10⁰
10¹
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
100
90
80
70
25 °C
60
125 °C
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
V_F (V)
Fig. 7 - Diode Forward Characteristics
4
V_CC = 600 V
3.5
R_g = 15 Ω
3
V_GE = - 15 V
T_J = 125 °C
2.5
E_rec
2
1.5
1
0.5
0
0
20
40
60
80
100
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_C
3
2.5
2
E_rec
1.5
1
V_CC = 600 V
0.5 ^{IC = 50 A}
V_GE = - 15 V
T_J = 125 °C
0
0
20
40
60
80
100
R_g (Ω)
Fig. 9 - Diode Switching Loss vs. R_g
Revision: 10-Jun-15
4
Document Number: 94820
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000