VS-GB50TP120N Datasheet, PDF (3/6 Pages) Vishay Siliconix – 10 μs short circuit capability

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100
90
80
70
25 °C
60
125 °C
50
40
30
20
10
V_GE = 15 V
0
0
0.5
1
1.5
2
2.5
3
V_CE (V)
Fig. 1 - Typical Output Characteristics
VS-GB50TP120N
Vishay Semiconductors
25
V_CC = 600 V
R_g = 15 Ω
20 ^VGE ^{= ± 15 V}
T_J = 125 °C
15
E_on
10
5
E_off
0
0
20
40
60
80
100
I_C (A)
Fig. 3 - Switching Loss vs. I_C
100
90
80
70
60
50
40
30
20
10
0
6
7
125 °C
25 °C
V_CE = 20 V
8
9
10 11
12
V_GE (V)
Fig. 2 - Typical Transfer Characteristics
25
V_CC = 600 V
I_C = 50 A
20 ^VGE ^{= ± 15 V}
T_J = 125 °C
15
E_on
10
E_off
5
0
0
20
40
60
80
100
R_g (Ω)
Fig. 4 - Switching Loss vs. R_g
120
105
90
I_C, Module
75
60
45
30
R_g = 15 Ω
15 _{VGE = ± 15 V}
0 ^{TJ = 125 °C}
0 250 500
750 1000 1250 1500
V_CE (V)
Fig. 5 - RBSOA
Revision: 10-Jun-15
3
Document Number: 94820
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